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説明:

Light-emitting electronic devices are ubiqui- tous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a mate- rial platform enabling broad electrical tuning of the spectrum of electroluminescent devices is difficult. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. As the physical mechanism responsible for light emission is robust and does not depend on details of the interfaces, these structures are compatible with simple large areas device production methods.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Light-emitting, field-effect transistors, electroluminescence

刊行年月日: 2022-07-07

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 13 issue. 1 3917

研究助成金:

• Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung Division II

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-022-31605-9

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更新時刻: 2025-02-27 12:31:04 +0900

MDRでの公開時刻: 2025-02-27 12:31:04 +0900