Light sources with bias tunable spectrum based on van der Waals interface transistors

Hugo Henck; Diego Mauro; Daniil Domaretskiy; Marc Philippi; Shahriar Memaran; Wenkai Zheng; Zhengguang Lu; Dmitry Shcherbakov; Chun Ning Lau; Dmitry Smirnov; Luis Balicas; Kenji Watanabe; Takashi Taniguchi; Vladimir I. Fal’ko; Ignacio Gutiérrez-Lezama; Nicolas Ubrig; Alberto F. Morpurgo

doi:10.1038/s41467-022-31605-9

Article Light sources with bias tunable spectrum based on van der Waals interface transistors

Hugo Henck ; Diego Mauro ; Daniil Domaretskiy ; Marc Philippi ; Shahriar Memaran ; Wenkai Zheng ; Zhengguang Lu ; Dmitry Shcherbakov ; Chun Ning Lau ; Dmitry Smirnov ; Luis Balicas ; Kenji Watanabe (National Institute for Materials Science) ; Takashi Taniguchi (National Institute for Materials Science) ; Vladimir I. Fal’ko ; Ignacio Gutiérrez-Lezama ; Nicolas Ubrig ; Alberto F. Morpurgo

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Hugo Henck, Diego Mauro, Daniil Domaretskiy, Marc Philippi, Shahriar Memaran, Wenkai Zheng, Zhengguang Lu, Dmitry Shcherbakov, Chun Ning Lau, Dmitry Smirnov, Luis Balicas, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Fal’ko, Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Alberto F. Morpurgo. Light sources with bias tunable spectrum based on van der Waals interface transistors. Nature Communications. 2022, 13 (1), 3917. https://doi.org/10.1038/s41467-022-31605-9

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Light-emitting electronic devices are ubiqui- tous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a mate- rial platform enabling broad electrical tuning of the spectrum of electroluminescent devices is difficult. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage –by suitably selecting the material forming the interfaces– and on-chip, by changing the bias to modify the device operation point. As the physical mechanism responsible for light emission is robust and does not depend on details of the interfaces, these structures are compatible with simple large areas device production methods.

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