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説明:

Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350 µA/µm, and field effect mobility 700 cm2/Vs and 10,000 at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveals unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: 2D materials, field effect transistors, PdSe2

刊行年月日: 2024-01-26

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Communications (ISSN: 20411723) vol. 15 issue. 1 761

研究助成金:

• National Science Foundation DMR 2128945
• United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-21-1-02684
• United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-19-1-0390

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41467-024-44972-2

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更新時刻: 2025-02-08 12:30:27 +0900

MDRでの公開時刻: 2025-02-08 12:30:28 +0900