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Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350 µA/µm, and field effect mobility 700 cm2/Vs and 10,000 at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveals unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields.

Rights:

• Creative Commons BY Attribution 4.0 International
  

Keyword: 2D materials, field effect transistors, PdSe2

Date published: 2024-01-26

Publisher: Springer Science and Business Media LLC

Journal:

• Nature Communications (ISSN: 20411723) vol. 15 issue. 1 761

Funding:

• National Science Foundation DMR 2128945
• United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-21-1-02684
• United States Department of Defense | United States Air Force | AFMC | Air Force Office of Scientific Research FA9550-19-1-0390

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41467-024-44972-2

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Updated at: 2025-02-08 12:30:27 +0900

Published on MDR: 2025-02-08 12:30:28 +0900