Publication
Auger Depth Profiling Analysis of FeNi/CoFeB/FeNi Specimen Using an Ultra Low Angle Incidence Ion Beam
磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために,極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った.その結果,イオン加速電圧0.5 kVでは多層薄膜の本来の構造を反映した対称的な B のオージェデプスプロファイルが得られることがわかった.イオン加速電圧3.0 kVのデプスプロファイルは,イオン加速電圧0.5 kVのそれに比べて深さ分解能は劣るが,多層薄膜が持つ本来の対称的な構造を短時間で評価できた.一方,アトムプローブ・トモグラフィーにより同試料を測定した結果,一次元濃度プロファイルは,合金と比べて電界蒸発のしきい値の高い B が遅れて検出されるため本来の多層薄膜の対称的な構造と異なる非対称なアーティファクト構造が見られることがわかった.
We have investigated the Auger depth profiling analysis for magnetic head materials of FeNi:5 nm/CoFeB:3 nm/FeN:10 nm by the glancing-angle Ar ion beam sputtering method at an incident angle of 7 degree from the sample surface. Auger depth profile with the ion beam at acceleration voltage of 0.5 kV quantitatively evaluated the original symmetrical distri-bution of B in the multilayered thin film. The Auger depth profile at the ion acceleration voltage of 3.0 kV also evaluated the original symmetrical distribution in a shorter time although its depth resolution was lower than that of the ion accelera-tion voltage of 0.5 kV. In contrast, as a result of measuring the same sample by atom probe tomography, one-dimensional concentration profile of B was artificially asymmetrical caused by the larger threshold voltage of high electric field evapo-ration of B than those of alloy components.
- First published at
- Creator
- Keyword
- Resource type
- Material/Specimen
- FeNi/CoFeB/FeNi Thin Film
- Publisher
- Date published
- 12/09/2018
- Rights statement
- Licensed Date
- 17/08/2018
- Journal
- Manuscript type
- Version of record (Published version)
- Language
- Last modified
- 04/06/2021
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