表面電子分光法における電子の散乱効果の研究

This article describes the inelastic scattering effect on surface electron spectroscopies such as XPS and AES. It is very important to describe the attenuation rate of the electron signal due to inelastic scattering events in a solid in order to improve the accuracy of quantitative surface analysis. For this, “attenuation length (AL) “ has been used for a long time to describe the attenuation rate. AL is, however, replaced by the “effective attenuation length (EAL), which includes the elastic scattering effect, because the signal electrons may not vary exponentially with the thickness of an overlayer film due to the elastic scattering. Then, the meanings and measurements of physical quantities such as electron inelastic mean free path (IMFP) and EAL are described.