Near-interface electronic and magnetic states of insulator/Co2MnSi structures probed by hard x-ray photoemission combined with x-ray total reflection

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Depth-dependent electronic and magnetic states of AlOx and MgO capped Co2MnSi thin films were measured by using hard X-ray photoemission spectroscopy (HAXPES) combined with X-ray total reflection (TR). TR-HAXPES revealed that the near-interface electronic and magnetic states of Co2MnSi films differed from those of bulk measured in non-TR condition. The decrease of the Co and Mn magnetizations near the interface along the easy magnetization axis in the bulk region relative to those in the bulk region and the changes in the valence band profiles were experimentally detected by non-destructive HAXPES utilizing TR. These results suggest that the combination of HAXPES with TR is useful to experimentally detect the electronic and magnetic states of near-interface and buried bulk regions in non-destructive way for insulator/ferromagnet heterojunctions.

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Date published
  • 07/02/2024
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  • Version of record (Published version)