Publication

High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

MDR Open Deposited
Analytics

Downloadable Content

Download PDF
Download This Work (Zip)
Citations

In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on single-crystalline diamond substrate. Both MOSFETs show good operations with on/off ratios as high as 1010. Current output maximum normalized by gate width for the triple-gate H-diamond MOSFET is ‒271.3 mA mm‒1, which is almost two times higher than that of the planar-type MOSFET. This study is meaningful to fabricate high current out and downscaled H-diamond MOSFETs.

First published at
Creator
  • Name
    LIU, Jiangwei
    ORCID
    https://orcid.org/0000-0003-2580-7401
    Organization
    National Institute for Materials Science
    Sub organization
    機能性材料研究拠点
    Role
    author
    Name
    OOSATO, Hirotaka
    Organization
    National Institute for Materials Science
    Sub organization
    技術開発・共用部門/微細加工プラットフォーム
    Role
    author
    Name
    DA, Bo
    ORCID
    https://orcid.org/0000-0002-0785-8662
    Organization
    National Institute for Materials Science
    Sub organization
    統合型材料開発・情報基盤部門/材料データプラットフォームセンター/材料データ解析グループ
    Role
    author
    Name
    KOIDE, Yasuo
    Organization
    National Institute for Materials Science
    Sub organization
    技術開発・共用部門/ＮＩＭＳ・名大窒化ガリウム評価基盤研究ラボラトリ　－天野・小出共同研究ラボ－
    Role
    author
Keyword
Resource type
Publisher
Date published
  • 07/05/2019
Rights statement
Language

Items

Thumbnail Title Date Uploaded Size Visibility Actions
shrine20230224-1595-gqy7mo.pdf 1000 KB MDR Open