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Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Description/Abstract:

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...

Keyword:

GaN

Resource Type:

Article

Author:

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

09/05/2024