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Filtering by: Keyword thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Description/Abstract:

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of...

Keyword:

thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors

Resource Type:

Article

Author:

Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu, Yibin Xu, Haidong Wang, Mengjie Song, Wei Wang, Yanguang Zhou, Xuqing Liu, Yu Shi, Yu Jia, Sujun Guan, Tatsuro Hanajiri, Toru Maekawa, Akitoshi Okino, and Takanobu Watanabe

Journal:

Micromachines

Date Uploaded:

13/11/2023