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Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM
Description/Abstract:
The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers...
Keyword:
GaAs(110)
,
Kelvin probe force microscopy
,
p-n junction
, and
qPlus sensor
Resource Type:
Article
Author:
Nobuyuki Ishida
and
Takaaki Mano
Journal:
Nanotechnology
Date Uploaded:
03/04/2024
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1
Keyword
GaAs(110)
1
Kelvin probe force microscopy
1
p-n junction
1
qPlus sensor
[remove]
1
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English
1
Publisher
IOP Publishing
1
Resource type
Article
1
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open
1
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In Copyright
1
Author
Nobuyuki Ishida
1
Takaaki Mano
1
Funder
Japan Society for the Promotion of Science
1
Journal
Nanotechnology
1