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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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atom probe tomography
1
cathodoluminescence
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gallium nitride
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implantation
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scanning transmission electron microscopy
1
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English
1
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AIP Publishing
1
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Article
1
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1
Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
Author
Ashutosh Kumar
1
Hideki Sakurai
1
Jun Chen
1
Jun Uzuhashi
1
Kacper Sierakowski
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JOURNAL OF APPLIED PHYSICS
1