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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...

Keyword:

atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy

Resource Type:

Article

Author:

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

04/07/2023

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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