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Random access memory
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Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
Description/Abstract:
As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...
Keyword:
Crystallographic defects
,
Electrical properties and parameters
,
Electronic bandstructure
,
First-principle calculations
,
Random access memory
,
Resistive switching
,
Thermally stimulated current spectroscopy
,
Transmission electron microscope
,
electron energy loss spectroscopy
, and
semiconductor structures
Resource Type:
Article
Author:
Harada, Yoshitomo
,
Kido, Giyuu
,
Hirayama, Taisei
,
Kato, Seiichi
,
Nigo, Seisuke
,
Kubota, Masato
, and
Kitazawa, Hideaki
Journal:
journal of applied physics
Date Uploaded:
05/10/2020
Date Modified:
06/10/2020
Nanoporous Dna Field Effect Transistor with Potential for Random‐Access Memory Applications: A Selectivity Performance Evaluation
Description/Abstract:
Methods to encode digital data items as strands of synthetic DNA followed by selective data retrieval have been demonstrated. However, th...
Keyword:
DNA
,
Field effect transistor
, and
Random access memory
Resource Type:
Article
Author:
Volkan Kilinc
,
Ryoma Hayakawa
,
Yusuke Yamauchi
,
Yutaka Wakayama
, and
Jonathan P. Hill
Journal:
Advanced Sensor Research
Date Uploaded:
19/08/2024
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Random access memory
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Crystallographic defects
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English
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American Institute of Physics
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
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2012
1
Author
Harada, Yoshitomo
1
Hirayama, Taisei
1
Jonathan P. Hill
1
Kato, Seiichi
1
Kido, Giyuu
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http://rightsstatements.org/vocab/InC/1.0/
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Japan Society for the Promotion of Science
1
Ministry of Education, Culture, Sports, Science and Technology
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Journal
Advanced Sensor Research
1
journal of applied physics
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