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HVPE
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ε-Ga2O3
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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy
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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
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Yuichi Oshima
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Katsuaki Kawara
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JAPANESE JOURNAL OF APPLIED PHYSICS
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JOURNAL OF APPLIED PHYSICS
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