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Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Description/Abstract:
We demonstrated selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy on SiO2-masked (001) and (010) β-Ga2O3 substrate...
Keyword:
Ga2O3
and
selective area growth
Resource Type:
Article
Author:
Takayoshi Oshima
and
Yuichi Oshima
Journal:
Applied Physics Express
Date Uploaded:
28/11/2023
Date Modified:
28/11/2023
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Ga2O3
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selective area growth
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English
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IOP Publishing
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Takayoshi Oshima
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Yuichi Oshima
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Applied Physics Express
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