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Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Description/Abstract:

As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...

Keyword:

Crystallographic defects, Electrical properties and parameters, Electronic bandstructure, First-principle calculations, Random access memory, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope, electron energy loss spectroscopy, and semiconductor structures

Resource Type:

Article

Author:

Harada, Yoshitomo, Kido, Giyuu, Hirayama, Taisei, Kato, Seiichi, Nigo, Seisuke, Kubota, Masato, and Kitazawa, Hideaki

Journal:

journal of applied physics

Date Uploaded:

05/10/2020

Date Modified:

06/10/2020