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Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
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Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
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