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On‐Surface Synthesis of Silole and Disila‐Cyclooctene Derivatives
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Near‐Field Photodetection in Direction Tunable Surface Plasmon Polaritons Waveguides Embedded with Graphene
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Terahertz electric-field-driven dynamical multiferroicity in SrTiO3
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Development of a Photoemission Microscopy Apparatus Using a Vacuum Ultraviolet Laser
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Vibrational Coupling to Quasi‐Bound States in the Continuum under Tailored Coupling Conditions
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The Effect of Li Ion and Anion Supply on Li Dissolution/Deposition Behavior in LiNO3 Electrolyte Solutions for Li-Air Batteries
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Formation of a zirconium oxide crystal nucleus in the initial nucleation stage in aluminosilicate glass investigated by X-ray multiscale analysis
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
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Mechanism of local hydrogen entry into Fe sheets induced by atmospheric corrosion: Significance of potential, pH, and rust layer thickness
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Fabrication of thin-film batteries composed of LiCoO2, Li3PO4, and Li layers
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Multiscale Finite Element Analysis of Yield-point Phenomenon in Ferrite–Pearlite Duplex Steels
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Minimal-surface-based multiphase metamaterials with highly variable stiffness
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Multi-objective topology optimization of porous microstructure in die-bonding layer of a semiconductor
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Mechanical Properties, Tissue Structure, and Elemental Composition of the Walking Leg Tips of Coconut Crabs
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Crucial role of interfacial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>s</mml:mi><mml:mtext>−</mml:mtext><mml:mi>d</mml:mi></mml:mrow></mml:math> exchange interaction in the temperature dependence of tunnel magnetoresistance
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Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions
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Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
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Effects of time per layer and part geometry on thermal history and microcracking in the fabrication of nickel superalloy samples by laser powder bed fusion
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Pt/GaN Schottky barrier height lowering by incorporated hydrogen
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High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond
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