An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...

Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...

The structural change in Pt networks composed of multiple chain connections among grains was observed in air at 1 atm by atomic-resolutio...