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Filtering by: Type of work Publication Keyword scanning transmission electron microscopy Keyword atom probe tomography Publisher AIP Publishing Rights Statement Sim Creative Commons BY Attribution 4.0 International

1. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

1. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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1. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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