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Filtering by: Type of work Publication Keyword Resistive switching Publisher American Institute of Physics Resource type Article

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Description/Abstract:: As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...
Keyword:: Crystallographic defects, Electrical properties and parameters, Electronic bandstructure, First-principle calculations, Random access memory, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope, electron energy loss spectroscopy, and semiconductor structures
Resource Type:: Article
Author:: Harada, Yoshitomo, Kido, Giyuu, Hirayama, Taisei, Kato, Seiichi, Nigo, Seisuke, Kubota, Masato, and Kitazawa, Hideaki
Journal:: journal of applied physics
Date Uploaded:: 05/10/2020
Date Modified:: 06/10/2020