Index Catalog // MDR

Start Over

Filtering by: Type of work Publication Keyword First-principle calculations Keyword semiconductor structures Language English Rights Statement Sim In Copyright

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Description/Abstract:: As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...
Keyword:: Crystallographic defects, Electrical properties and parameters, Electronic bandstructure, First-principle calculations, Random access memory, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope, electron energy loss spectroscopy, and semiconductor structures
Resource Type:: Article
Author:: Harada, Yoshitomo, Kido, Giyuu, Hirayama, Taisei, Kato, Seiichi, Nigo, Seisuke, Kubota, Masato, and Kitazawa, Hideaki
Journal:: journal of applied physics
Date Uploaded:: 05/10/2020
Date Modified:: 06/10/2020

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Limit your search

Type of work

Keyword

Language

Publisher

Resource type

Visibility

Rights Statement Sim

Date

Author

License

Journal

Search Constraints

Search Results

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Limit your search