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Study of device characteristics of intrinsic Josephson junction terahertz emitters related to annealing conditions of the crystals

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Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along <-12-10>

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Epitaxial growth of phase-pure e-Ga2O3 by halide vapor phase epitaxy

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Hydride Vapor Phase Epitaxy and characterization of High-Quality ScN epilayers

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Materials issues and devices of α- and β-Ga2O3

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Improvement of magnetic field detectivity in electrical 1/f noise-dominated tunnel magnetoresistive sensors by AC magnetic field modulation technique

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

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Sorption-induced static mode nanomechanical sensing with viscoelastic receptor layers for multistep injection-purge cycles

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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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