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Filtering by: Journal JOURNAL OF APPLIED PHYSICS Type of work Publication Keyword scanning transmission electron microscopy Publisher AIP Publishing Resource type Article Visibility open

1. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Description/Abstract:: Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:: activation, gallium nitride, scanning transmission electron microscopy, and semiconductor
Resource Type:: Article
Author:: Ashutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, and Peter Ramvall
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 28/09/2023
Date Modified:: 28/09/2023

2. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:: An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:: atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy
Resource Type:: Article
Author:: Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 04/07/2023

1. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

2. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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1. Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

2. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

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