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1. In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

Description/Abstract:: The present work demonstrates a new technique to solve the in-plane rotational domain problem. In the technique, κ-Ga2O3 was grown by epi...
Keyword:: ELO, HVPE, domain, ε-Ga2O3, and κ-Ga2O3
Resource Type:: Article
Author:: Yuichi Oshima, Katsuaki Kawara, Takayoshi Oshima, and Takashi Shinohe
Journal:: JAPANESE JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 22/01/2024
Date Modified:: 23/01/2024