Index Catalog // MDR

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

1 of 4

In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

2 of 4

Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

3 of 4

Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography

4 of 4

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