Index Catalog // MDR

Description/Abstract:: We have investigated the Auger depth profiling analysis of HfO2 /Si by the glancing angle ion beam sputtering method at an incident angle...
Keyword:: Auger Depth Profiling Analysis, HfO2/Si, and Ultra Low Angle Incidence Ion Beam
Material/Specimen:: HfO2
Resource Type:: Article
Author:: Ogiwara, Toshiya, Nagata, Takahiro, and Yoshikawa, Hideki
Journal:: Journal of Surface Analysis
Date Uploaded:: 19/08/2021
Date Modified:: 20/08/2021

Description/Abstract:: 磁気ヘッド材料として用いられているFeNi:5 nm/CoFeB:3 nm/FeNi:10 nm多層薄膜の深さ方向組成分布を調べるために，極低角度入射イオンビームを用いたオージェ深さ方向分析によりイオン加速電圧0.5 kVおよび3.0 kVのスパッタ条件で分析を行った．その...
Keyword:: Auger Depth Profiling Analysis, Ultra Low Angle Incidence Ion Beam, and FeNi/CoFeB/FeNi Thin Film
Material/Specimen:: FeNi/CoFeB/FeNi Thin Film
Resource Type:: Article
Author:: Ogiwara, Toshiya, Yanagiuchi, Katsuaki, and Yoshikawa, Hideki
Journal:: Journal of Surface Analysis
Date Uploaded:: 28/05/2021
Date Modified:: 04/06/2021

Description/Abstract:: We have investigated the Auger depth profiling analysis of HfO2/Si by the glancing-angle ion beam sputtering method at an incident angle ...
Keyword:: Auger Depth Profiling analysis, HfO2/Si, and Ultra Low Angle Incidence Ion Beam
Material/Specimen:: HfO2
Resource Type:: Article
Author:: Yoshikawa, Hideki, Ogiwara, Toshiya, and Nagata, Takahiro
Journal:: Journal of Surface Analysis
Date Uploaded:: 25/05/2021
Date Modified:: 26/05/2021

Description/Abstract:: 電子線マイクロアナライザーは広く材料の分析に用いられ，定量分析法はZAF法としてほぼ確立されている．しかし，Mg-Ge合金においては，定量分析の結果MgとGeの濃度の合計120wt.% と異常な値を示した．しかも電子線の加速電圧が高くなるに従ってMgの定量値が上昇する．こ...
Keyword:: Mg-Ge alloy, ZAF, electron probe microanalyzer, and mass absorption coefficient
Resource Type:: Article
Author:: Nishio, Mitsuaki, Imai, Motoharu, Tanuma, Shigeo, Yoshikawa, HIdeki, and Isoda, Yukihiro
Journal:: Journal of Surface Analysis
Date Uploaded:: 20/07/2020
Date Modified:: 22/07/2020

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