Index Catalog // MDR

Description/Abstract:: For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...
Keyword:: GaN
Resource Type:: Article
Author:: Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide
Journal:: JOURNAL OF APPLIED PHYSICS
Date Uploaded:: 09/05/2024

Description/Abstract:: Super-high dielectric constant (k) AlOx/TiOy nanolaminates (ATO NLs) are deposited by an atomic layer deposition technique for applicatio...
Keyword:: ATO, nanolaminate, and super-high dielectric constant
Resource Type:: Article
Author:: Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, and Yasuo Koide
Journal:: Nanomaterials
Date Uploaded:: 05/10/2023
Date Modified:: 05/10/2023

Description/Abstract:: Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) based electronic devices for hi...
Keyword:: Ni, high-temperature, hydrogen-terminated diamond (H-diamond), ohmic contact, and specific contact resistance
Resource Type:: Article
Author:: Xiaolu Yuan, Jiangwei Liu, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, and Yasuo Koide
Date Uploaded:: 28/02/2023

Description/Abstract:: Here, thermal stabilities for Ohmic contact properties of Pt, Au, and Pd on the same hydrogen-terminated diamond (H-diamond) epitaxial la...
Keyword:: thermal stabilities for Ohmic contact properties
Resource Type:: Article
Author:: Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, and Yasuo Koide
Date Uploaded:: 28/02/2023

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