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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
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Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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