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Filtering by: Author Takashi Sekiguchi

Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...

Keyword:

atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy

Resource Type:

Article

Author:

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

04/07/2023
Characterization and properties of green-emitting beta-SiAlON : Eu2+ powder phosphors for white light-emitting diodes

Description/Abstract:

This letter reports a b-SiAlON:Eu2+ green phosphor with the composition of Eu0.00296Si0.41395Al0.01334O0.0044N0.56528. The phosphor powde...

Keyword:

LEDs, luminescence, oxynitride, and phosphor

Resource Type:

Article

Author:

Naoto Hirosaki, Rong-Jun Xie, Koji Kimoto, Takashi Sekiguchi, Yoshinobu Yamamoto, Takayuki Suehiro, and Mamoru Mitomo

Date Uploaded:

28/04/2023