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Filtering by: Author Shinya Takashima Resource type Article

Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Description/Abstract:

For rooting the development of GaN-based optoelectronic devices, understanding the roles of midgap recombination centers (MGRCs), namely ...

Keyword:

GaN

Resource Type:

Article

Author:

Shigefusa F. Chichibu, Kohei Shima, Akira Uedono, Shoji Ishibashi, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Hirotaka Watanabe, Atsushi Tanaka, Yoshio Honda, Jun Suda, Hiroshi Amano, Tetsu Kachi, Toshihide Nabatame, Yoshihiro Irokawa, and Yasuo Koide

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

09/05/2024
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...

Keyword:

atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy

Resource Type:

Article

Author:

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

04/07/2023