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Epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy

Description/Abstract:

We demonstrated epitaxial lateral overgrowth of a-Ga2O3 by halide vapor phase epitaxy. We formed stripe patterned or triangular lattice d...

Keyword:

ELO, HVPE, dislocation, and α-Ga2O3

Resource Type:

Article

Author:

Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu, and S. Fujita

Journal:

APL MATERIALS

Date Uploaded:

29/01/2024

Date Modified:

01/02/2024