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Filtering by: Author Nigo, Seisuke Keyword Random access memory Publisher American Institute of Physics Rights Statement Sim In Copyright Visibility open

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Description/Abstract:: As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...
Keyword:: Crystallographic defects, Electrical properties and parameters, Electronic bandstructure, First-principle calculations, Random access memory, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope, electron energy loss spectroscopy, and semiconductor structures
Resource Type:: Article
Author:: Harada, Yoshitomo, Kido, Giyuu, Hirayama, Taisei, Kato, Seiichi, Nigo, Seisuke, Kubota, Masato, and Kitazawa, Hideaki
Journal:: journal of applied physics
Date Uploaded:: 05/10/2020
Date Modified:: 06/10/2020

1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

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1. Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

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