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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Description/Abstract:
Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:
activation
,
gallium nitride
,
scanning transmission electron microscopy
, and
semiconductor
Resource Type:
Article
Author:
Ashutosh Kumar
,
Martin Berg
,
Qin Wang
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Michael Salter
, and
Peter Ramvall
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
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activation
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gallium nitride
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scanning transmission electron microscopy
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semiconductor
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English
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AIP Publishing
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Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
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Ashutosh Kumar
1
Jun Uzuhashi
1
Martin Berg
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