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Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging

Description/Abstract:

Enhancement of energy resolution due to evolution of monochromators has made electron energy loss spectroscopy (EELS) in transmission ele...

Keyword:

4D-STEM, ABF-STEM, EELS, GaN, HAADF-STEM, HAXPES, and defect

Resource Type:

Article

Author:

Shunsuke Yamashita, Sei Fukushima, Jun Kikkawa, Ryoji Arai, Yuya Kanitani, Koji Kimoto, and Yoshihiro Kudo

Journal:

APL Materials

Date Uploaded:

19/03/2024