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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Description/Abstract:

We used atomic-scale direct observations by transmission electron microscopy (TEM) and atom probe tomography to clarify the crystallograp...

Keyword:

atom probe tomography, gallium nitride, and transmission electron microscopy

Resource Type:

Article

Author:

Emi Kano, Keita Kataoka, Jun Uzuhashi, Kenta Chokawa, Hideki Sakurai, Akira Uedono, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Ritsuo Otsuki, Koki Kobayashi, Yuta Itoh, Masahiro Nagao, Tadakatsu Ohkubo, Kazuhiro Hono, Jun Suda, Tetsu Kachi, and Nobuyuki Ikarashi

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

28/09/2023

Date Modified:

28/09/2023
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing

Description/Abstract:

An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...

Keyword:

atom probe tomography, cathodoluminescence, gallium nitride, implantation, and scanning transmission electron microscopy

Resource Type:

Article

Author:

Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, and Kazuhiro Hono

Journal:

JOURNAL OF APPLIED PHYSICS

Date Uploaded:

04/07/2023