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Katsuaki Kawara
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Takayoshi Oshima
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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precur...
In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through ...
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Katsuaki Kawara
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Takashi Shinohe
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JAPANESE JOURNAL OF APPLIED PHYSICS
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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