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Jun Uzuhashi
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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Description/Abstract:
Here, we investigate the effects of O2:N2 (1:1) as ambient gas as compared with pure N2 during activation annealing of Mg as p-type dopin...
Keyword:
activation
,
gallium nitride
,
scanning transmission electron microscopy
, and
semiconductor
Resource Type:
Article
Author:
Ashutosh Kumar
,
Martin Berg
,
Qin Wang
,
Jun Uzuhashi
,
Tadakatsu Ohkubo
,
Michael Salter
, and
Peter Ramvall
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
28/09/2023
Date Modified:
28/09/2023
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Description/Abstract:
An area selective doping via ion implantation is a key technology to realize gallium nitride (GaN) based energy-efficient power devices; ...
Keyword:
atom probe tomography
,
cathodoluminescence
,
gallium nitride
,
implantation
, and
scanning transmission electron microscopy
Resource Type:
Article
Author:
Jun Uzuhashi
,
Jun Chen
,
Ashutosh Kumar
,
Wei Yi
,
Tadakatsu Ohkubo
,
Ryo Tanaka
,
Shinya Takashima
,
Masaharu Edo
,
Kacper Sierakowski
,
Michal Bockowski
,
Hideki Sakurai
,
Tetsu Kachi
,
Takashi Sekiguchi
, and
Kazuhiro Hono
Journal:
JOURNAL OF APPLIED PHYSICS
Date Uploaded:
04/07/2023
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Jun Uzuhashi
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Ministry of Education, Culture, Sports, Science and Technology
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