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Jun Uzuhashi
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Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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atom probe tomography
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gallium nitride
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scanning transmission electron microscopy
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transmission electron microscopy
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English
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Creative Commons BY Attribution 4.0 International
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
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Author
Jun Uzuhashi
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Tadakatsu Ohkubo
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Kazuhiro Hono
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Hideki Sakurai
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Jun Suda
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Ministry of Education, Culture, Sports, Science and Technology
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JOURNAL OF APPLIED PHYSICS
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APL Materials
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Journal of Alloys and Compounds
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METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
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