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Jun Uzuhashi
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Tetsu Kachi
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JOURNAL OF APPLIED PHYSICS
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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
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Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
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atom probe tomography
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gallium nitride
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cathodoluminescence
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implantation
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scanning transmission electron microscopy
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AIP Publishing
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Hideki Sakurai
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Jun Uzuhashi
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Kacper Sierakowski
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