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Jun Suda
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Jun Uzuhashi
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
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gallium nitride
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atom probe tomography
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transmission electron microscopy
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positron
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vacancy
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Jun Suda
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Jun Uzuhashi
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Akira Uedono
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Hideki Sakurai
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JOURNAL OF APPLIED PHYSICS
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Proceedings of SPIE - The International Society for Optical Engineering
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