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Filtering by: Author Hirayama, Taisei Journal journal of applied physics Publisher American Institute of Physics Rights Statement Sim In Copyright

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Description/Abstract:

As a next-generation memory, we have developed a rare-metal-free memory using Al oxide with a high-density of oxygen vacancies (Vos). Th...

Keyword:

Crystallographic defects, Electrical properties and parameters, Electronic bandstructure, First-principle calculations, Random access memory, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope, electron energy loss spectroscopy, and semiconductor structures

Resource Type:

Article

Author:

Harada, Yoshitomo, Kido, Giyuu, Hirayama, Taisei, Kato, Seiichi, Nigo, Seisuke, Kubota, Masato, and Kitazawa, Hideaki

Journal:

journal of applied physics

Date Uploaded:

05/10/2020

Date Modified:

06/10/2020