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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
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Materials issues and devices of α- and β-Ga2O3
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Growth and etching characteristics of (001) β- Ga2O3 by plasma-assisted molecular beam epitaxy
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Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction
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