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Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
Description/Abstract:
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of...
Keyword:
thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors
Resource Type:
Article
Author:
Tianzhuo Zhan
,
Mao Xu
,
Zhi Cao
,
Chong Zheng
,
Hiroki Kurita
,
Fumio Narita
,
Yen-Ju Wu
,
Yibin Xu
,
Haidong Wang
,
Mengjie Song
,
Wei Wang
,
Yanguang Zhou
,
Xuqing Liu
,
Yu Shi
,
Yu Jia
,
Sujun Guan
,
Tatsuro Hanajiri
,
Toru Maekawa
,
Akitoshi Okino
, and
Takanobu Watanabe
Journal:
Micromachines
Date Uploaded:
13/11/2023
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thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors
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MDPI AG
1
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open
1
Rights Statement Sim
Creative Commons BY Attribution 4.0 International
1
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Akitoshi Okino
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Chong Zheng
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