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Filtering by: Author Akitoshi Okino Author Chong Zheng Journal Micromachines Type of work Publication Publisher MDPI AG Rights Statement Sim Creative Commons BY Attribution 4.0 International

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

Description/Abstract:

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of...

Keyword:

thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors

Resource Type:

Article

Author:

Tianzhuo Zhan, Mao Xu, Zhi Cao, Chong Zheng, Hiroki Kurita, Fumio Narita, Yen-Ju Wu, Yibin Xu, Haidong Wang, Mengjie Song, Wei Wang, Yanguang Zhou, Xuqing Liu, Yu Shi, Yu Jia, Sujun Guan, Tatsuro Hanajiri, Toru Maekawa, Akitoshi Okino, and Takanobu Watanabe

Journal:

Micromachines

Date Uploaded:

13/11/2023

Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review

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