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Pt/GaN Schottky barrier height lowering by incorporated hydrogen

Description/Abstract:

Changes in the hydrogen-induced Schottky barrier height (ΦB) of Pt/GaN rectifiers fabricated on free-standing GaN substrates were investi...

Keyword:

GaN, Schottky barrier height, and hydrogen

Resource Type:

Article

Author:

色川芳宏, 大井暁彦, 生田目俊秀, and 小出康夫

Journal:

ECS Journal of Solid State Science and Technology

Date Uploaded:

10/04/2024