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Filtering by: Author Katsuaki Kawara Remove constraint Author: Katsuaki Kawara Author Yuichi Oshima Remove constraint Author: Yuichi Oshima Journal SEMICONDUCTOR SCIENCE AND TECHNOLOGY Remove constraint Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY

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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

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Publication1

Keyword

HVPE1
α-Ga2O31

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English1

Publisher

IOP Publishing1

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Article1

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open1

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In Copyright1

Author

Katsuaki Kawara[remove]1
Mitsuru Okigawa1
Takashi Shinohe1
Takayoshi Oshima1
Yuichi Oshima[remove]1

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY[remove]1

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