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Takayoshi Oshima
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IOP Publishing
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Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate
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Growth dynamics of selective-area-grown rutile-type SnO2 on TiO2 (110) substrate
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Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications
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Rapid growth of α-Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties
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In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism
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Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
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Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
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Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
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α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
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Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
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