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Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM

Description/Abstract:

The electrostatic potential distribution in materials and devices plays an important role in controlling the behaviors of charge carriers...

Keyword:

GaAs(110), Kelvin probe force microscopy, p-n junction, and qPlus sensor

Resource Type:

Article

Author:

Nobuyuki Ishida and Takaaki Mano

Journal:

Nanotechnology

Date Uploaded:

03/04/2024